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Transistors / Power Field-Effect Transistors / FDP18N20F
Datasheets
FDP18N20F by:

Power MOSFET, N-Channel, UniFETTM, FRFET®, 200 V, 18 A, 140 mΩ, TO-220, TO-220-3, 1000-TUBE

Part Details for FDP18N20F by onsemi

Results Overview of FDP18N20F by onsemi

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FDP18N20F Information

FDP18N20F by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDP18N20F

Part # Distributor Description Stock Price Buy
DISTI # 54AH8667
Newark Mosfet, N-Ch, 200V, 18A, 150Deg C, 100W Rohs Compliant: Yes |Onsemi FDP18N20F RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
Buy Now
DISTI # FDP18N20F
Avnet Americas Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP18N20F) RoHS: Compliant Min Qty: 1064 Package Multiple: 1 Container: Tube 0
  • 1,064 $0.5732
  • 1,100 $0.5663
  • 2,200 $0.5595
  • 5,400 $0.5569
  • 11,000 $0.5529
$0.5529 / $0.5732 Buy Now
DISTI # FDP18N20F
Avnet Silica Trans MOSFET NCH 200V 18A 3Pin3Tab TO220AB Rail (Alt: FDP18N20F) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDP18N20F
EBV Elektronik Trans MOSFET NCH 200V 18A 3Pin3Tab TO220AB Rail (Alt: FDP18N20F) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 1967
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Part Details for FDP18N20F

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FDP18N20F Part Data Attributes

Parametric Data
FDP18N20F onsemi
Buy Now Datasheet
Compare Parts:
FDP18N20F onsemi Power MOSFET, N-Channel, UniFETTM, FRFET®, 200 V, 18 A, 140 mΩ, TO-220, TO-220-3, 1000-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-220-3
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 324 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.145 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDP18N20F

This table gives cross-reference parts and alternative options found for FDP18N20F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDP18N20F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDPF18N20FT onsemi $1.1774 Power MOSFET, N-Channel, UniFETTM, FRFET®, 200 V, 18 A, 140 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE FDP18N20F vs FDPF18N20FT

FDP18N20F Related Parts

FDP18N20F Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the FDP18N20F is typically defined by the device's voltage and current ratings. For the FDP18N20F, the maximum voltage rating is 500V and the maximum current rating is 18A. Operating the device within these ratings ensures safe and reliable operation.

  • Proper cooling of the FDP18N20F is crucial to ensure reliable operation. A heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins. A thermal interface material (TIM) can also be used to improve heat transfer between the device and heat sink.

  • The recommended gate drive voltage for the FDP18N20F is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI). A lower gate drive voltage can reduce power consumption and EMI, but may compromise switching performance.

  • To protect the FDP18N20F from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, use a current sense resistor and a fuse or a current limiter to detect and respond to overcurrent conditions. A protection circuit can also be implemented using a dedicated IC or a microcontroller.

  • A good PCB layout for the FDP18N20F should minimize parasitic inductance and capacitance. Use a ground plane to reduce electromagnetic interference (EMI) and ensure good heat dissipation. Keep the gate drive circuitry close to the device and use a low-impedance path for the drain and source connections. Avoid using vias under the device and ensure good soldering and thermal connections.

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