Part Details for FDP2570 by Fairchild Semiconductor Corporation
Overview of FDP2570 by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for FDP2570
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 48 |
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RFQ | ||
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Quest Components | 38 |
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$3.5800 / $5.3700 | Buy Now |
Part Details for FDP2570
FDP2570 CAD Models
FDP2570 Part Data Attributes
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FDP2570
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDP2570
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 22A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 375 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 93 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDP2570
This table gives cross-reference parts and alternative options found for FDP2570. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDP2570, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SUM75N15-18P-E3 | TRANSISTOR 75 A, 150 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Vishay Siliconix | FDP2570 vs SUM75N15-18P-E3 |
| RFH25N18 | Power Field-Effect Transistor, 25A I(D), 180V, 1.875ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Harris Semiconductor | FDP2570 vs RFH25N18 |
| IRFS250B | Power Field-Effect Transistor, 21.3A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fairchild Semiconductor Corporation | FDP2570 vs IRFS250B |
| IRFS4228TRRPBF | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | FDP2570 vs IRFS4228TRRPBF |
| BUZ21SMD | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Infineon Technologies AG | FDP2570 vs BUZ21SMD |
| SPP21N10 | Power Field-Effect Transistor, 21A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDP2570 vs SPP21N10 |
| IRFS4228PBF | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | FDP2570 vs IRFS4228PBF |
| IRFS4228TRRPBF | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | FDP2570 vs IRFS4228TRRPBF |
| SUM85N15-19-E3 | Power Field-Effect Transistor, 85A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | FDP2570 vs SUM85N15-19-E3 |
| FQA19N20C | Power Field-Effect Transistor, 21.8A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | FDP2570 vs FQA19N20C |