Transistors
FDP3651U
Description: Power Field-Effect Transistor, 80A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Overview of FDP3651U by Fairchild Semiconductor Corporation

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  • Distributor Offerings: ( 3 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for FDP3651U by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   175
RFQ
Bristol Electronics   50
RFQ
Quest Components   140
  • 1 $3.4560
  • 36 $1.9008
  • 80 $1.7280
$1.7280 / $3.4560 Buy Now

CAD Models for FDP3651U by Fairchild Semiconductor Corporation
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Part Data Attributes for FDP3651U by Fairchild Semiconductor Corporation

FDP3651U
Fairchild Semiconductor Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-220
Package Description
TO-220AB, 3 PIN
Pin Count
3
Manufacturer Package Code
TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
266 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
80 A
Drain-source On Resistance-Max
0.018 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
255 W
Pulsed Drain Current-Max (IDM)
220 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FDP3651U
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 80A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
    VS

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