Datasheets
FDP7N60NZ by:

Power Field-Effect Transistor, 6.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

Part Details for FDP7N60NZ by Fairchild Semiconductor Corporation

Results Overview of FDP7N60NZ by Fairchild Semiconductor Corporation

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Applications Industrial Automation Motor control systems

FDP7N60NZ Information

FDP7N60NZ by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDP7N60NZ

Part # Distributor Description Stock Price Buy
Bristol Electronics   220
RFQ

Part Details for FDP7N60NZ

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FDP7N60NZ Part Data Attributes

FDP7N60NZ Fairchild Semiconductor Corporation
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FDP7N60NZ Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 275 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 1.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 147 W
Pulsed Drain Current-Max (IDM) 26 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

FDP7N60NZ Related Parts

FDP7N60NZ Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the FDP7N60NZ can withstand is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for reliable operation and to prevent thermal runaway.

  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material (TIM) between the device and the heat sink, and ensure the heat sink is properly mounted and has sufficient airflow. The PCB should also be designed with thermal vias and a copper pour to dissipate heat effectively.

  • The recommended gate drive voltage for the FDP7N60NZ is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate oxide stress and reduce the device's reliability.

  • Yes, the FDP7N60NZ is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit. A proper gate drive circuit and layout are crucial to minimize the switching losses and ensure reliable operation.

  • To protect the FDP7N60NZ from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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