-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power MOSFET, N-Channel, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220F, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
52M3189
|
Newark | N-Channel UnifetTm Mosfet 500V, 18A, 265M/Tube Rohs Compliant: Yes |Onsemi FDPF18N50 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1000 |
|
$1.2800 | Buy Now |
DISTI #
31Y1383
|
Newark | Mosfet, N-Ch, 500V, 18A, To-220F-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Onsemi FDPF18N50 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 163 |
|
$1.7400 / $2.5600 | Buy Now |
DISTI #
FDPF18N50-ND
|
DigiKey | MOSFET N-CH 500V 18A TO220F Min Qty: 1 Lead time: 29 Weeks Container: Tube | Temporarily Out of Stock |
|
$1.3600 / $2.9100 | Buy Now |
DISTI #
FDPF18N50
|
Avnet Americas | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF18N50) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 29 Weeks, 0 Days Container: Tube | 0 |
|
$1.4579 / $1.6320 | Buy Now |
DISTI #
31Y1383
|
Avnet Americas | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: 31Y1383) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 163 Partner Stock |
|
$2.0500 / $3.0000 | Buy Now |
DISTI #
52M3189
|
Avnet Americas | Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: 52M3189) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 4 Days Container: Bulk | 1000 Partner Stock |
|
$2.1600 / $3.1100 | Buy Now |
DISTI #
512-FDPF18N50
|
Mouser Electronics | MOSFET 500V N-CH MOSFET RoHS: Compliant | 1810 |
|
$1.3600 / $2.1000 | Buy Now |
|
Future Electronics | N-Channel 500 V 0.265 Ω Through Hole Mosfet TO-220F RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$1.3900 / $1.5900 | Buy Now |
|
Future Electronics | N-Channel 500 V 0.265 Ω Through Hole Mosfet TO-220F RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$1.3900 / $1.5900 | Buy Now |
|
Rochester Electronics | Power Field-Effect Transistor, 18A, 500V, 0.265ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: Active Min Qty: 1 | 813 |
|
$1.3500 / $1.5900 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
FDPF18N50
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDPF18N50
onsemi
Power MOSFET, N-Channel, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220F, 1000-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220F, 3 PIN | |
Manufacturer Package Code | 221AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 3 Days | |
Samacsys Manufacturer | onsemi | |
Additional Feature | FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 945 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.265 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 38.5 W | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |