Datasheets
FDPF20N50FT by:

Power Field-Effect Transistor, 20A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN

Part Details for FDPF20N50FT by Fairchild Semiconductor Corporation

Results Overview of FDPF20N50FT by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FDPF20N50FT Information

FDPF20N50FT by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for FDPF20N50FT

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FDPF20N50FT Part Data Attributes

FDPF20N50FT Fairchild Semiconductor Corporation
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FDPF20N50FT Fairchild Semiconductor Corporation Power Field-Effect Transistor, 20A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description ROHS COMPLIANT, TO-220F, 3 PIN
Pin Count 3
Manufacturer Package Code TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 1110 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.26 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 38.5 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

FDPF20N50FT Related Parts

FDPF20N50FT Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDPF20N50FT is -55°C to 150°C.

  • To ensure proper biasing, the FDPF20N50FT requires a gate-source voltage (Vgs) between 2V to 10V, and a drain-source voltage (Vds) between 10V to 500V.

  • The maximum current rating for the FDPF20N50FT is 20A.

  • To protect the FDPF20N50FT from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and a current limiter or a fuse to limit the current.

  • The thermal resistance of the FDPF20N50FT is 1.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient).

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