Datasheets
FDPF5N50T by:

Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, SC-91A, TO-220F, FULL PACK-3

Part Details for FDPF5N50T by Fairchild Semiconductor Corporation

Results Overview of FDPF5N50T by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

FDPF5N50T Information

FDPF5N50T by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDPF5N50T

Part # Distributor Description Stock Price Buy
Bristol Electronics   200
RFQ
Rochester Electronics Power Field-Effect Transistor, 5A, 500V, 1.4ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 55864
  • 1 $0.5950
  • 25 $0.5831
  • 100 $0.5593
  • 500 $0.5355
  • 1,000 $0.5057
$0.5057 / $0.5950 Buy Now
ComSIT USA N-CHANNEL UNIFET MOSFET Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB , ECCN: EAR99 RoHS: Compliant Stock DE - 2000
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for FDPF5N50T

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FDPF5N50T Part Data Attributes

FDPF5N50T Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDPF5N50T Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, SC-91A, TO-220F, FULL PACK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description ROHS COMPLIANT, PLASTIC, SC-91A, TO-220F, FULL PACK-3
Pin Count 3
Manufacturer Package Code TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 225 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 28 W
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

FDPF5N50T Related Parts

FDPF5N50T Frequently Asked Questions (FAQ)

  • The maximum junction temperature (Tj) for the FDPF5N50T is 175°C. Exceeding this temperature can lead to device failure or reduced lifespan.

  • To ensure proper cooling, provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the PCB layout and airflow in your design to minimize thermal impedance.

  • The recommended gate drive voltage for the FDPF5N50T is between 10V and 15V. This ensures reliable switching and minimizes the risk of device damage.

  • Yes, the FDPF5N50T is suitable for high-frequency switching applications up to 100 kHz. However, be aware of the increased switching losses and ensure proper thermal management to prevent overheating.

  • To protect the FDPF5N50T from ESD, handle the device with anti-static precautions, such as using an ESD wrist strap or mat. Also, ensure that your PCB design includes ESD protection components, such as TVS diodes or resistors, to prevent ESD damage.

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