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Power MOSFET, N-Channel, UniFETTM, 500 V, 5 A, 1.4 Ω, TO-220F, TO-220-3 FullPak, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDPF5N50T by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
3368779
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Farnell | MOSFET, N-CH, 500V, 5A, 150DEG C, 28W RoHS: Compliant Min Qty: 1 Lead time: 47 Weeks, 1 Days Container: Each | 801 |
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$0.5918 / $1.3400 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 5A, 500V, 1.4ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 8000 |
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$0.5057 / $0.5950 | Buy Now |
DISTI #
FDPF5N50T
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Avnet Silica | Trans MOSFET NCH 500V 5A 3Pin3Tab TO220F Rail (Alt: FDPF5N50T) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
FDPF5N50T
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EBV Elektronik | Trans MOSFET NCH 500V 5A 3Pin3Tab TO220F Rail (Alt: FDPF5N50T) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 1827 |
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RFQ |
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FDPF5N50T
onsemi
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Datasheet
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FDPF5N50T
onsemi
Power MOSFET, N-Channel, UniFETTM, 500 V, 5 A, 1.4 Ω, TO-220F, TO-220-3 FullPak, 1000-TUBE
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-220-3 FullPak | |
Package Description | SC-91A, TO-220F, 3 PIN | |
Manufacturer Package Code | 221AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 225 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 28 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |