Part Details for FDPF6N60ZUT by onsemi
Overview of FDPF6N60ZUT by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for FDPF6N60ZUT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
64R3042
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Newark | Uf 600V 2.0Ohm U To220F/Tube Rohs Compliant: Yes |Onsemi FDPF6N60ZUT Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.6290 / $0.8030 | Buy Now |
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DISTI #
FDPF6N60ZUT
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Avnet Americas | Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF6N60ZUT) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Container: Tube | 5000 |
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RFQ | |
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Rochester Electronics | Power MOSFET, N-Channel, UniFETTM, 600V, 4.5A RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 796 |
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$0.6291 / $0.7401 | Buy Now |
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DISTI #
FDPF6N60ZUT
|
Avnet Americas | Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF6N60ZUT) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Container: Tube | 5000 |
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RFQ | |
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Ameya Holding Limited | Min Qty: 50 | 185 |
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$1.3507 / $1.5007 | Buy Now |
Part Details for FDPF6N60ZUT
FDPF6N60ZUT CAD Models
FDPF6N60ZUT Part Data Attributes:
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FDPF6N60ZUT
onsemi
Buy Now
Datasheet
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Compare Parts:
FDPF6N60ZUT
onsemi
Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 600 V, 4.5 A, 2 Ω, TO-220F, 1000-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | ROHS COMPLIANT, TO-220F, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 6 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 33.8 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |