Datasheets
FDPF8N60ZUT by:

Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 600 V, 6.5 A, 1.35 Ω, TO-220F, 1000-TUBE

Part Details for FDPF8N60ZUT by onsemi

Overview of FDPF8N60ZUT by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDPF8N60ZUT

Part # Distributor Description Stock Price Buy
DISTI # 54AH8662
Newark Mosfet, N-Ch, 600V, 6.5A, 150Deg C/34.5W Rohs Compliant: Yes |Onsemi FDPF8N60ZUT Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
Buy Now
DISTI # 64R3044
Newark N Channel Mosfet, Unitfet, 600V, 6.5A, To-220F, Transistor Polarity:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:6.5A, On Resistance Rds(On):1.15Ohm, Transistor Mounting:Through Hole, Threshold Voltage Vgs:5Vrohs Compliant: Yes |Onsemi FDPF8N60ZUT Min Qty: 300 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 100 $1.3900
  • 500 $1.1900
  • 1,000 $1.0300
$1.0300 / $1.3900 Buy Now
DISTI # 3368783
element14 Asia-Pacific MOSFET, N-CH, 600V, 6.5A, 150DEG C/34.5W RoHS: Compliant Min Qty: 1 Container: Each 7
  • 1 $1.6072
  • 10 $1.4237
  • 100 $1.2036
  • 500 $0.9761
  • 1,000 $0.9027
  • 5,000 $0.8660
$0.8660 / $1.6072 Buy Now
DISTI # 3368783
Farnell MOSFET, N-CH, 600V, 6.5A, 150DEG C/34.5W RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 7
  • 1 $1.8703
$1.8703 Buy Now

Part Details for FDPF8N60ZUT

FDPF8N60ZUT CAD Models

FDPF8N60ZUT Part Data Attributes

FDPF8N60ZUT onsemi
Buy Now Datasheet
Compare Parts:
FDPF8N60ZUT onsemi Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 600 V, 6.5 A, 1.35 Ω, TO-220F, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description TO-220F, 3 PIN
Manufacturer Package Code 221AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 41 Weeks, 4 Days
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 420 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 1.35 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 34.5 W
Pulsed Drain Current-Max (IDM) 26 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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