Part Details for FDS3572 by onsemi
Overview of FDS3572 by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for FDS3572
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31Y1390
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Newark | Mosfet Transistor, N Channel, 8.9 A, 80 V, 0.014 Ohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FDS3572 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3245 |
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$0.9180 / $1.8000 | Buy Now |
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DISTI #
29X6694
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Newark | Mosfet, N Channel, 80V, 8.9A, Soic-8, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:8.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FDS3572 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6820 / $0.9230 | Buy Now |
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DISTI #
FDS3572
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Avnet Americas | Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.6308 / $0.6544 | Buy Now |
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DISTI #
FDS3572
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Avnet Americas | Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.6311 / $0.6542 | Buy Now |
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DISTI #
FDS3572
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TME | Transistor: N-MOSFET, unipolar, 80V, 5.6A, 2.5W, SO8 Min Qty: 1 | 0 |
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$0.6800 / $1.4600 | RFQ |
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DISTI #
FDS3572
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 | 0 |
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$0.6700 | Buy Now |
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DISTI #
SMC-FDS3572
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 18 |
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RFQ | |
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DISTI #
FDS3572
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Avnet Asia | Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days | 0 |
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$0.6311 / $0.7058 | Buy Now |
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DISTI #
FDS3572
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Avnet Silica | Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 23 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDS3572
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EBV Elektronik | Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days | EBV - 27500 |
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Buy Now |
Part Details for FDS3572
FDS3572 CAD Models
FDS3572 Part Data Attributes
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FDS3572
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS3572
onsemi
N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ, SOIC-8, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOIC-8 | |
| Package Description | SO-8 | |
| Manufacturer Package Code | 751EB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 515 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 8.9 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |