Datasheets
FDS3572 by:

N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ, SOIC-8, 2500-REEL

Part Details for FDS3572 by onsemi

Overview of FDS3572 by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Price & Stock for FDS3572

Part # Distributor Description Stock Price Buy
DISTI # 31Y1390
Newark Mosfet Transistor, N Channel, 8.9 A, 80 V, 0.014 Ohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FDS3572 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 3245
  • 1 $1.8000
  • 10 $1.5100
  • 25 $1.4000
  • 50 $1.3100
  • 100 $1.2100
  • 250 $1.1000
  • 500 $0.9870
  • 1,000 $0.9180
$0.9180 / $1.8000 Buy Now
DISTI # 29X6694
Newark Mosfet, N Channel, 80V, 8.9A, Soic-8, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:8.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FDS3572 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.9230
  • 3,000 $0.8850
  • 6,000 $0.8050
  • 12,000 $0.7250
  • 18,000 $0.6980
  • 30,000 $0.6820
$0.6820 / $0.9230 Buy Now
DISTI # FDS3572
Avnet Americas Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.6544
  • 5,000 $0.6464
  • 10,000 $0.6410
  • 15,000 $0.6356
  • 20,000 $0.6308
$0.6308 / $0.6544 Buy Now
DISTI # FDS3572
Avnet Americas Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.6542
  • 5,000 $0.6463
  • 10,000 $0.6386
  • 15,000 $0.6355
  • 20,000 $0.6311
$0.6311 / $0.6542 Buy Now
DISTI # FDS3572
TME Transistor: N-MOSFET, unipolar, 80V, 5.6A, 2.5W, SO8 Min Qty: 1 0
  • 1 $1.4600
  • 10 $1.2300
  • 100 $0.9400
  • 250 $0.8300
  • 500 $0.7700
  • 1,000 $0.7100
  • 2,500 $0.6800
$0.6800 / $1.4600 RFQ
DISTI # FDS3572
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.6700
$0.6700 Buy Now
DISTI # SMC-FDS3572
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 18
RFQ
DISTI # FDS3572
Avnet Asia Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days 0
  • 2,500 $0.7058
  • 5,000 $0.6966
  • 7,500 $0.6877
  • 12,500 $0.6790
  • 25,000 $0.6622
  • 62,500 $0.6463
  • 125,000 $0.6311
$0.6311 / $0.7058 Buy Now
DISTI # FDS3572
Avnet Silica Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 23 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDS3572
EBV Elektronik Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R (Alt: FDS3572) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days EBV - 27500
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 10000
  • 2,500 $1.2100
  • 10,000 $1.1200
$1.1200 / $1.2100 Buy Now

Part Details for FDS3572

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FDS3572 Part Data Attributes

FDS3572 onsemi
Buy Now Datasheet
Compare Parts:
FDS3572 onsemi N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ, SOIC-8, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOIC-8
Package Description SO-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 515 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 8.9 A
Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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