Datasheets
FDS3672 by:

Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

Part Details for FDS3672 by Fairchild Semiconductor Corporation

Overview of FDS3672 by Fairchild Semiconductor Corporation

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Applications Industrial Automation Motor control systems

Price & Stock for FDS3672

Part # Distributor Description Stock Price Buy
Bristol Electronics   4058
RFQ
Bristol Electronics   96
RFQ
Quest Components 7.5 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 2017
  • 1 $3.4000
  • 383 $1.4025
  • 714 $1.2750
$1.2750 / $3.4000 Buy Now
Win Source Electronics MOSFET N-CH 100V 7.5A 8-SOIC / Trans MOSFET N-CH 100V 7.5A 8-Pin SOIC T/R 35740
  • 23 $2.2610
  • 54 $1.8560
  • 84 $1.7980
  • 115 $1.7400
  • 149 $1.6820
  • 199 $1.5080
$1.5080 / $2.2610 Buy Now

Part Details for FDS3672

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FDS3672 Part Data Attributes

FDS3672 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDS3672 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SO-8
Pin Count 8
Manufacturer Package Code 8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 416 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 7.5 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS3672

This table gives cross-reference parts and alternative options found for FDS3672. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS3672, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS3672_NL Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Fairchild Semiconductor Corporation FDS3672 vs FDS3672_NL
FDS3672 N-Channel PowerTrench® MOSFET, 100V, 7.5A, 22mΩ, 2500-REEL onsemi FDS3672 vs FDS3672
Part Number Description Manufacturer Compare
FDS3672 N-Channel PowerTrench® MOSFET, 100V, 7.5A, 22mΩ, 2500-REEL onsemi FDS3672 vs FDS3672
FDS3672_NL Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Fairchild Semiconductor Corporation FDS3672 vs FDS3672_NL

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