Part Details for FDS3672 by Fairchild Semiconductor Corporation
Overview of FDS3672 by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS3672
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4058 |
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RFQ | ||
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Bristol Electronics | 96 |
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RFQ | ||
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Quest Components | 7.5 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | 2017 |
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$1.2750 / $3.4000 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 7.5A 8-SOIC / Trans MOSFET N-CH 100V 7.5A 8-Pin SOIC T/R | 35740 |
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$1.5080 / $2.2610 | Buy Now |
Part Details for FDS3672
FDS3672 CAD Models
FDS3672 Part Data Attributes
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FDS3672
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDS3672
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOIC | |
Package Description | SO-8 | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD, JEDEC MS-012, .150"NARROW BODY | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 416 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 7.5 A | |
Drain-source On Resistance-Max | 0.023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDS3672
This table gives cross-reference parts and alternative options found for FDS3672. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS3672, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDS3672_NL | Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Fairchild Semiconductor Corporation | FDS3672 vs FDS3672_NL |
FDS3672 | N-Channel PowerTrench® MOSFET, 100V, 7.5A, 22mΩ, 2500-REEL | onsemi | FDS3672 vs FDS3672 |