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P-Channel 1.8V Specified PowerTrench® MOSFET -20V, -13.5A, 8.5mΩ, SOIC-8, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
67R2068
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Newark | Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:13.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:600Mv, Power Dissipation:2.5Wrohs Compliant: Yes |Onsemi FDS4465 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6280 / $0.8500 | Buy Now |
DISTI #
34C0164
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Newark | P Channel Mosfet, -20V, 13.5A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:13.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:600Mv Rohs Compliant: Yes |Onsemi FDS4465 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.9390 | Buy Now |
DISTI #
FDS4465
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Avnet Americas | Trans MOSFET P-CH 20V 13.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS4465) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel | 12500 |
|
$0.5811 / $0.6023 | Buy Now |
DISTI #
FDS4465
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Avnet Americas | Trans MOSFET P-CH 20V 13.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS4465) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.5808 / $0.6026 | Buy Now |
DISTI #
FDS4465
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Avnet Americas | Trans MOSFET P-CH 20V 13.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS4465) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$0.5808 / $0.6026 | Buy Now |
DISTI #
FDS4465
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Avnet Americas | Trans MOSFET P-CH 20V 13.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS4465) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.5811 / $0.6023 | Buy Now |
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Bristol Electronics | 308 |
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RFQ | ||
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Rochester Electronics | Power Field-Effect Transistor, 13.5A, 20V, 0.0085ohm, P-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 2501 |
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$0.5831 / $0.6860 | Buy Now |
DISTI #
FDS4465
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TME | Transistor: P-MOSFET, unipolar, -20V, -13.5A, 2.5W, SO8 Min Qty: 1 | 1996 |
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$0.8000 / $1.5200 | Buy Now |
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Ameya Holding Limited | P-Channel 20 V 8.5 mOhm 1.8V Specified PowerTrench Mosfet SOIC-8 | 2236 |
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RFQ |
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FDS4465
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDS4465
onsemi
P-Channel 1.8V Specified PowerTrench® MOSFET -20V, -13.5A, 8.5mΩ, SOIC-8, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOIC-8 | |
Package Description | SO-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 13.5 A | |
Drain-source On Resistance-Max | 0.0085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 750 pF | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 704 ns | |
Turn-on Time-Max (ton) | 74 ns |
This table gives cross-reference parts and alternative options found for FDS4465. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS4465, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FDS4465 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 13.5A I(D), 20V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | FDS4465 vs FDS4465 |
FDS4465_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 13.5A I(D), 20V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | FDS4465 vs FDS4465_NL |