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Transistors / Small Signal Field-Effect Transistors / FDS4935BZ
Datasheets
FDS4935BZ by:

Dual -30V P-Channel PowerTrench® MOSFET -6.9A 22mΩ, SOIC-8, 2500-REEL

Part Details for FDS4935BZ by onsemi

Results Overview of FDS4935BZ by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Energy and Power Systems Renewable Energy

FDS4935BZ Information

FDS4935BZ by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDS4935BZ

Part # Distributor Description Stock Price Buy
DISTI # 25AC9565
Newark 30V Dual P-Ch Rohs Compliant: Yes |Onsemi FDS4935BZ RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 2500
  • 2,500 $0.4140
  • 5,000 $0.3980
  • 10,000 $0.3830
  • 15,000 $0.3730
$0.3730 / $0.4140 Buy Now
DISTI # 67P3486
Newark P Channel Mosfet, -30V, Soic, Channel Type:P Channel, Drain Source Voltage Vds N Channel:-, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:-, Continuous Drain Current Id P Channel:6.9A, Product Range:- Rohs Compliant: Yes |Onsemi FDS4935BZ RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 830
  • 1 $0.4970
  • 10 $0.4970
  • 25 $0.4970
  • 50 $0.4550
  • 100 $0.4550
  • 250 $0.4200
  • 500 $0.4200
  • 1,000 $0.4200
$0.4200 / $0.4970 Buy Now
DISTI # 20M1184
Newark P Channel Mosfet, -30V, Soic, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds N Channel:-, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:-, Continuous Drain Current Id P Channel:6.9A Rohs Compliant: Yes |Onsemi FDS4935BZ RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,500 $0.3840
  • 5,000 $0.3730
$0.3730 / $0.3840 Buy Now
DISTI # FDS4935BZ
Avnet Americas Transistor MOSFET Array Dual P-CH 30V 6.9A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS4935BZ) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 2500
  • 2,500 $0.3329
  • 5,000 $0.3289
  • 10,000 $0.3250
  • 15,000 $0.3235
  • 20,000 $0.3212
$0.3212 / $0.3329 Buy Now
DISTI # FDS4935BZ
Avnet Americas Transistor MOSFET Array Dual P-CH 30V 6.9A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS4935BZ) RoHS: Compliant Min Qty: 2174 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 129999 Partner Stock
  • 2,174 $0.3159
  • 2,200 $0.3142
  • 4,400 $0.3126
  • 11,000 $0.3110
  • 22,000 $0.3094
$0.3094 / $0.3159 Buy Now
DISTI # 67P3486
Avnet Americas Transistor MOSFET Array Dual P-CH 30V 6.9A 8-Pin SOIC T/R - Product that comes on tape, but is not reeled (Alt: 67P3486) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 53 Weeks, 5 Days Container: Ammo Pack 510 Partner Stock
  • 1 $1.2100
  • 10 $0.8290
  • 25 $0.7470
  • 50 $0.6650
  • 100 $0.5820
$0.5820 / $1.2100 Buy Now
DISTI # FDS4935BZ
TME Transistor: P-MOSFET x2, unipolar, -30V, -6.9A, 1.6W, SO8 Min Qty: 1 2472
  • 1 $0.9970
  • 5 $0.7460
  • 50 $0.5820
  • 100 $0.4680
  • 500 $0.4500
$0.4500 / $0.9970 Buy Now
DISTI # FDS4935BZ
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.3400
$0.3400 Buy Now
DISTI # SMC-FDS4935BZ
Sensible Micro Corporation Trans Mosfet P-Ch 30V 6.9A 8-Pin Soic T/R RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days 28
  • 100 $0.5557
  • 500 $0.5415
  • 1,000 $0.5130
$0.5130 / $0.5557 RFQ
DISTI # FDS4935BZ
Avnet Asia Transistor MOSFET Array Dual P-CH 30V 6.9A 8-Pin SOIC T/R (Alt: FDS4935BZ) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days 0
  • 5,000 $0.3486
  • 10,000 $0.3440
  • 15,000 $0.3396
  • 25,000 $0.3353
  • 50,000 $0.3270
  • 125,000 $0.3192
  • 250,000 $0.3116
$0.3116 / $0.3486 Buy Now
DISTI # FDS4935BZ
Avnet Silica Transistor MOSFET Array Dual P-CH 30V 6.9A 8-Pin SOIC T/R (Alt: FDS4935BZ) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDS4935BZ
EBV Elektronik Transistor MOSFET Array Dual P-CH 30V 6.9A 8-Pin SOIC T/R (Alt: FDS4935BZ) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 129999
RFQ
LCSC 30V 6.9A 1.6W 22m10V6.9A 1.9V250uA 2 P-Channel SOIC-8 MOSFETs ROHS 269
  • 1 $0.7316
  • 10 $0.6030
  • 30 $0.5387
  • 100 $0.4760
  • 500 $0.4132
  • 1,000 $0.3949
$0.3949 / $0.7316 Buy Now
New Advantage Corporation Dual P-Channel 30 V 1.6 W 40 nC Silicon Surface Mount Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 32500
  • 2,500 $0.4929
  • 32,500 $0.4600
$0.4600 / $0.4929 Buy Now

Part Details for FDS4935BZ

FDS4935BZ CAD Models

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FDS4935BZ Part Data Attributes

Parametric Data
FDS4935BZ onsemi
Buy Now Datasheet
Compare Parts:
FDS4935BZ onsemi Dual -30V P-Channel PowerTrench® MOSFET -6.9A 22mΩ, SOIC-8, 2500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOIC-8
Package Description SOP-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Additional Feature ESD PROTECTION
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.9 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS4935BZ

This table gives cross-reference parts and alternative options found for FDS4935BZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS4935BZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDS4935BZ Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 6.9A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 FDS4935BZ vs FDS4935BZ

FDS4935BZ Related Parts

FDS4935BZ Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended PCB layout, but it's essential to consult with a thermal expert or perform thermal simulations to ensure optimal performance.

  • The FDS4935BZ requires a specific biasing scheme to operate within its recommended operating conditions. Ensure that the gate-source voltage (Vgs) is within the recommended range (typically -2V to 2V) and the drain-source voltage (Vds) is within the recommended range (typically 10V to 30V). Consult the datasheet for specific biasing requirements.

  • Monitor the device's junction temperature (Tj), drain-source voltage (Vds), and drain current (Id) to prevent overheating. The datasheet provides thermal resistance values and thermal derating curves to help estimate the device's temperature. Use thermal monitoring ICs or thermistors to monitor the device's temperature.

  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to protect the FDS4935BZ from ESD events. Ensure that the PCB design includes ESD protection and follow proper handling and storage procedures to prevent ESD damage.

  • Use a reflow soldering process with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. Ensure that the PCB is designed with a solder mask and that the device is handled and stored in an ESD-protected environment.

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