Datasheets
FDS6892A by:

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mΩ, 2500-REEL

Part Details for FDS6892A by onsemi

Overview of FDS6892A by onsemi

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Price & Stock for FDS6892A

Part # Distributor Description Stock Price Buy
DISTI # 73AK1028
Newark Transistor, Mosfet |Onsemi FDS6892A Min Qty: 650 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $0.7940
  • 1,000 $0.7320
$0.7320 / $0.7940 Buy Now
DISTI # 82C2569
Newark Dual N Channel Mosfet, 20V, Soic, Transistor Polarity:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:7.5A, On Resistance Rds(On):0.018Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:4.5V Rohs Compliant: Yes |Onsemi FDS6892A Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 2156-FDS6892A-488-ND
DigiKey POWER FIELD-EFFECT TRANSISTOR, 7 Min Qty: 539 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 4723
In Stock
  • 539 $0.5600
$0.5600 Buy Now
DISTI # FDS6892A
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6892A) RoHS: Compliant Min Qty: 1786 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 2435 Partner Stock
  • 1,786 $0.4144
  • 1,800 $0.4032
  • 3,600 $0.3920
  • 9,000 $0.3808
  • 18,000 $0.3696
  • 90,000 $0.3584
  • 180,000 $0.3472
$0.3472 / $0.4144 Buy Now
Rochester Electronics Power Field-Effect Transistor, 7.5A, 20V, 0.018ohm, 2-Element, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 4723
  • 1 $0.5628
  • 25 $0.5515
  • 100 $0.5290
  • 500 $0.5065
  • 1,000 $0.4784
$0.4784 / $0.5628 Buy Now
DISTI # FDS6892A
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6892A) RoHS: Compliant Min Qty: 1786 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 2435 Partner Stock
  • 1,786 $0.4144
  • 1,800 $0.4032
  • 3,600 $0.3920
  • 9,000 $0.3808
  • 18,000 $0.3696
  • 90,000 $0.3584
  • 180,000 $0.3472
$0.3472 / $0.4144 Buy Now
DISTI # FDS6892A
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6892A) RoHS: Compliant Min Qty: 1786 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 2435 Partner Stock
  • 1,786 $0.4144
  • 1,800 $0.4032
  • 3,600 $0.3920
  • 9,000 $0.3808
  • 18,000 $0.3696
  • 90,000 $0.3584
  • 180,000 $0.3472
$0.3472 / $0.4144 Buy Now
DISTI # 4184379
element14 Asia-Pacific TRANSISTOR, MOSFET RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $0.9908
  • 10 $0.8807
  • 100 $0.7559
  • 500 $0.6400
  • 1,000 $0.5827
  • 5,000 $0.5600
$0.5600 / $0.9908 Buy Now
DISTI # 4184379
Farnell TRANSISTOR, MOSFET RoHS: Compliant Min Qty: 2500 Lead time: 3 Weeks, 1 Days Container: Each 4723
  • 2,500 $0.5725
$0.5725 Buy Now
Flip Electronics Stock, ship today 2435
  • 1 $0.2800
$0.2800 RFQ

Part Details for FDS6892A

FDS6892A CAD Models

FDS6892A Part Data Attributes

FDS6892A onsemi
Buy Now Datasheet
Compare Parts:
FDS6892A onsemi Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 7.5A, 18mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SO-8, 8 PIN
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 7.5 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6892A

This table gives cross-reference parts and alternative options found for FDS6892A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6892A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6892A 7.5A, 20V, 0.018ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SO-8, 8 PIN Rochester Electronics LLC FDS6892A vs FDS6892A
FDS6892A Power Field-Effect Transistor, 7.5A I(D), 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN Fairchild Semiconductor Corporation FDS6892A vs FDS6892A
Part Number Description Manufacturer Compare
RF1K4909096 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor FDS6892A vs RF1K4909096
HAT1055R 5A, 60V, 0.13ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation FDS6892A vs HAT1055R
NDS9956 3.5A, 20V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Texas Instruments FDS6892A vs NDS9956
RF1K49090 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation FDS6892A vs RF1K49090
FDS9926A_NL Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6892A vs FDS9926A_NL
FDS6961AZ Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6892A vs FDS6961AZ
PHN210T Power Field-Effect Transistor Nexperia FDS6892A vs PHN210T
IRF7101 Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier FDS6892A vs IRF7101
BSO211P Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Infineon Technologies AG FDS6892A vs BSO211P
FW133 Power Field-Effect Transistor, 7A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd FDS6892A vs FW133

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