Part Details for FDS89161LZ by Fairchild Semiconductor Corporation
Overview of FDS89161LZ by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDS89161LZ
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ComSIT USA | DUAL N-CHANNEL SHIELDED GATE POWERTRENCH MOSFET Power Field-Effect Transistor, 2.7A I(D), 100V, 0.105ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ | |
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Win Source Electronics | MOSFET 2N-CH 100V 2.7A 8SOIC | 11000 |
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$7.5370 / $11.3050 | Buy Now |
Part Details for FDS89161LZ
FDS89161LZ CAD Models
FDS89161LZ Part Data Attributes
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FDS89161LZ
Fairchild Semiconductor Corporation
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Datasheet
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FDS89161LZ
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.7A I(D), 100V, 0.105ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOIC | |
| Package Description | ROHS COMPLIANT, SOP-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, JEDEC MS-012, .150"NARROW BODY | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 13 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 2.7 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 31 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |