Part Details for FDS8934A by Fairchild Semiconductor Corporation
Overview of FDS8934A by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS8934A
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, Matched Pair, P-Channel, SO | 2417 |
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$0.5105 / $1.3923 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 4A, 20V, 0.065ohm, 2-Element, P-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 52862 |
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$0.6188 / $0.7280 | Buy Now |
Part Details for FDS8934A
FDS8934A CAD Models
FDS8934A Part Data Attributes:
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FDS8934A
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDS8934A
Fairchild Semiconductor Corporation
Dual P-Channel Enhancement Mode Field Effect Transistor, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOIC | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDS8934A
This table gives cross-reference parts and alternative options found for FDS8934A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8934A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MMDF2P01HDR2 | 3.4A, 12V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 | onsemi | FDS8934A vs MMDF2P01HDR2 |
HP4936DY | 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | Intersil Corporation | FDS8934A vs HP4936DY |
RF1K49090 | Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Fairchild Semiconductor Corporation | FDS8934A vs RF1K49090 |
HAT1126R | 6A, 60V, 0.085ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 | Renesas Electronics Corporation | FDS8934A vs HAT1126R |
HP4936DYT | 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | Intersil Corporation | FDS8934A vs HP4936DYT |
BSO207P | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.045ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOP-8 | Infineon Technologies AG | FDS8934A vs BSO207P |
BSO301SPH | Power Field-Effect Transistor, 12.6A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | FDS8934A vs BSO301SPH |
HUF76105DK8T | Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 | Fairchild Semiconductor Corporation | FDS8934A vs HUF76105DK8T |
NDS8961 | Power Field-Effect Transistor, 3.1A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS8934A vs NDS8961 |
BSO211PHXUMA1 | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | FDS8934A vs BSO211PHXUMA1 |