Part Details for FDS8936A by Fairchild Semiconductor Corporation
Overview of FDS8936A by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS8936A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FDS8936A-ND
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DigiKey | MOSFET 2N-CH 30V 6A 8SOIC Min Qty: 222 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
75856 In Stock |
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$1.3500 | Buy Now |
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Bristol Electronics | 741 |
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RFQ | ||
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 1800 |
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$0.4375 / $1.2500 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 6A, 30V, 0.028ohm, 2-Element, N-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 75856 |
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$1.1600 / $1.3700 | Buy Now |
Part Details for FDS8936A
FDS8936A CAD Models
FDS8936A Part Data Attributes
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FDS8936A
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDS8936A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOT | |
| Package Description | SOIC-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS8936A
This table gives cross-reference parts and alternative options found for FDS8936A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8936A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS6982_NF073 | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN | Fairchild Semiconductor Corporation | FDS8936A vs FDS6982_NF073 |
| IRF7313TRPBF-1 | Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET | Infineon Technologies AG | FDS8936A vs IRF7313TRPBF-1 |
| IRF7313PBF | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | FDS8936A vs IRF7313PBF |
| NTMD6N03R2G | Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL | onsemi | FDS8936A vs NTMD6N03R2G |
| NTMD6N03R2 | 6A, 30V, 0.032ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SOIC-8 | onsemi | FDS8936A vs NTMD6N03R2 |
| IRF7313TRPBF | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | FDS8936A vs IRF7313TRPBF |
| IRF7313 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | FDS8936A vs IRF7313 |