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Transistors / Power Field-Effect Transistors / FDS8958A
Datasheets
FDS8958A by:

Dual N & P-Channel PowerTrench® MOSFET 30V, SOIC-8, 2500-REEL

Part Details for FDS8958A by onsemi

Overview of FDS8958A by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDS8958A

Part # Distributor Description Stock Price Buy
DISTI # 96K9895
Newark Mosfet, Dual, Np, So-8, Transistor Polarity:N And P Channel, Continuous Drain Current Id:7A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.019Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.9V, Power Dissipation Rohs Compliant: Yes |Onsemi FDS8958A RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 23498
  • 1 $0.8630
  • 10 $0.7610
  • 25 $0.6830
  • 50 $0.6040
  • 100 $0.5260
  • 250 $0.4840
  • 500 $0.4400
  • 1,000 $0.3740
$0.3740 / $0.8630 Buy Now
DISTI # 23K8080
Newark Dual N/P Channel Mosfet, 30V, Soic, Full Reel, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:7A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi FDS8958A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3840
  • 3,000 $0.3750
  • 6,000 $0.3460
  • 12,000 $0.3240
  • 18,000 $0.3020
  • 30,000 $0.2880
$0.2880 / $0.3840 Buy Now
Rochester Electronics Power Field-Effect Transistor, 7A, 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 127295
  • 1 $0.3099
  • 25 $0.3037
  • 100 $0.2913
  • 500 $0.2789
  • 1,000 $0.2634
$0.2634 / $0.3099 Buy Now
DISTI # FDS8958A
TME Transistor: N/P-MOSFET, unipolar, complementary pair, 30/-30V Min Qty: 1 631
  • 1 $0.7350
  • 5 $0.5040
  • 25 $0.4410
  • 100 $0.3990
  • 500 $0.3780
$0.3780 / $0.7350 Buy Now
DISTI # FDS8958A
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ
DISTI # FDS8958A
Avnet Silica Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R (Alt: FDS8958A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 34 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S541901489218
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 1500
  • 5 $0.7310
  • 50 $0.4650
  • 100 $0.3980
  • 200 $0.3780
  • 500 $0.3530
  • 1,000 $0.3320
$0.3320 / $0.7310 Buy Now
LCSC 30V 5A 0.084.5V4A 2W 1V250uA SOIC-8 MOSFETs ROHS 15
  • 1 $0.6518
  • 10 $0.6377
  • 30 $0.6282
  • 100 $0.6172
$0.6172 / $0.6518 Buy Now

Part Details for FDS8958A

FDS8958A CAD Models

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FDS8958A Part Data Attributes

Parametric Data
FDS8958A onsemi
Buy Now Datasheet
Compare Parts:
FDS8958A onsemi Dual N & P-Channel PowerTrench® MOSFET 30V, SOIC-8, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Lifetime Buy
Ihs Manufacturer ONSEMI
Part Package Code SOIC-8
Package Description SOP-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Date Of Intro 2017-09-22
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 54 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS8958A

This table gives cross-reference parts and alternative options found for FDS8958A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8958A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDS8958A Rochester Electronics LLC Check for Price 7A, 30V, 0.028ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8, 8 PIN FDS8958A vs FDS8958A
FDS8958A Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8, 8 PIN FDS8958A vs FDS8958A
Part Number Manufacturer Composite Price Description Compare
FDS8958A_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8, 8 PIN FDS8958A vs FDS8958A_NL
IRF7389TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FDS8958A vs IRF7389TRPBF
IRF7319TR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FDS8958A vs IRF7319TR
IRF7319 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 FDS8958A vs IRF7319
IRF7389TR International Rectifier Check for Price Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA FDS8958A vs IRF7389TR
IRF7319PBF International Rectifier Check for Price Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 FDS8958A vs IRF7319PBF
IRF7389 International Rectifier Check for Price Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 FDS8958A vs IRF7389
IRF7389TRPBF Infineon Technologies AG $0.6836 Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 FDS8958A vs IRF7389TRPBF
IRF7389TR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA FDS8958A vs IRF7389TR
IRF7319 International Rectifier Check for Price Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 FDS8958A vs IRF7319

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