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P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -5.5A, 50mΩ, SOT-223-4 / TO-261-4, 4000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDT434P by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
67R2084
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Newark | Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:600Mv, Power Dissipation:3W Rohs Compliant: Yes |Onsemi FDT434P RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
47T5052
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Newark | Mosfet Transistor, P Channel, 6 A, -20 V, 0.04 Ohm, -4.5 V, -600 Mv Rohs Compliant: Yes |Onsemi FDT434P RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
38C7187
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Newark | P Channel Mosfet, -20V, 6A, Sot-223, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:600Mv Rohs Compliant: Yes |Onsemi FDT434P RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
FDT434P
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Avnet Silica | Trans MOSFET PCH 20V 6A 4Pin3Tab SOT223 TR (Alt: FDT434P) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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DISTI #
FDT434P
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EBV Elektronik | Trans MOSFET PCH 20V 6A 4Pin3Tab SOT223 TR (Alt: FDT434P) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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FDT434P
onsemi
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Datasheet
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Compare Parts:
FDT434P
onsemi
P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -5.5A, 50mΩ, SOT-223-4 / TO-261-4, 4000-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-223-4 / TO-261-4 | |
Package Description | SOT-223, 4 PIN | |
Manufacturer Package Code | 318H-01 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDT434P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDT434P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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FDT434P | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | FDT434P vs FDT434P |
IRLMS6802TRPBF | Infineon Technologies AG | $0.2345 | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | FDT434P vs IRLMS6802TRPBF |
IRLMS6802TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | FDT434P vs IRLMS6802TR |