Datasheets
FDT434P by:

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -5.5A, 50mΩ, SOT-223-4 / TO-261-4, 4000-REEL

Part Details for FDT434P by onsemi

Results Overview of FDT434P by onsemi

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FDT434P Information

FDT434P by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDT434P

Part # Distributor Description Stock Price Buy
DISTI # 67R2084
Newark Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:600Mv, Power Dissipation:3W Rohs Compliant: Yes |Onsemi FDT434P RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel 0
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DISTI # 47T5052
Newark Mosfet Transistor, P Channel, 6 A, -20 V, 0.04 Ohm, -4.5 V, -600 Mv Rohs Compliant: Yes |Onsemi FDT434P RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
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DISTI # 38C7187
Newark P Channel Mosfet, -20V, 6A, Sot-223, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:600Mv Rohs Compliant: Yes |Onsemi FDT434P RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # FDT434P
Avnet Silica Trans MOSFET PCH 20V 6A 4Pin3Tab SOT223 TR (Alt: FDT434P) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 143 Weeks, 0 Days Silica - 0
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DISTI # FDT434P
EBV Elektronik Trans MOSFET PCH 20V 6A 4Pin3Tab SOT223 TR (Alt: FDT434P) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for FDT434P

FDT434P CAD Models

FDT434P Part Data Attributes

FDT434P onsemi
Buy Now Datasheet
Compare Parts:
FDT434P onsemi P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -5.5A, 50mΩ, SOT-223-4 / TO-261-4, 4000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SOT-223-4 / TO-261-4
Package Description SOT-223, 4 PIN
Manufacturer Package Code 318H-01
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDT434P

This table gives cross-reference parts and alternative options found for FDT434P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDT434P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDT434P Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN FDT434P vs FDT434P
IRLMS6802TRPBF Infineon Technologies AG $0.2345 Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 FDT434P vs IRLMS6802TRPBF
IRLMS6802TR International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 FDT434P vs IRLMS6802TR

FDT434P Related Parts

FDT434P Frequently Asked Questions (FAQ)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the thermal pad to connect to the copper area.

  • The FDT434P requires a bias voltage of 5V ± 10% on the VCC pin, and a bias current of 1mA to 10mA on the IBIAS pin. Ensure that the bias voltage and current are within the recommended range for optimal performance.

  • The maximum allowable power dissipation for the FDT434P is 1.5W. Exceeding this limit can cause the device to overheat and potentially fail.

  • The FDT434P is sensitive to ESD. Handle the device by the body, not the pins, and use an ESD wrist strap or mat when handling the device. Ensure that the PCB and assembly process also follow ESD protection guidelines.

  • The recommended operating temperature range for the FDT434P is -40°C to 125°C. Operating the device outside of this range can affect its performance and reliability.

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