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FDU8870 by:

Power Field-Effect Transistor

Part Details for FDU8870 by onsemi

Overview of FDU8870 by onsemi

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Part Details for FDU8870

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FDU8870 Part Data Attributes:

FDU8870 onsemi
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FDU8870 onsemi Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Package Description IN-LINE, R-PSIP-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 690 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.0044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 189 ns
Turn-on Time-Max (ton) 139 ns

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