Part Details for FDZ372NZ by Fairchild Semiconductor Corporation
Overview of FDZ372NZ by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Automotive
Price & Stock for FDZ372NZ
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | 7393 |
|
RFQ | ||
|
Rochester Electronics | Small Signal Field-Effect Transistor, 4.7A, 20V, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | Call for Availability |
|
$1.1700 / $1.3800 | Buy Now |
Part Details for FDZ372NZ
FDZ372NZ CAD Models
FDZ372NZ Part Data Attributes
|
FDZ372NZ
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FDZ372NZ
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 4.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1 X 1 MM, ROHS COMPLIANT, ULTRA THIN, WL-CSP-4
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | CSP | |
Package Description | 1 X 1 MM, ROHS COMPLIANT, ULTRA THIN, WL-CSP-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ESD PROTECTION | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.7 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 100 pF | |
JESD-30 Code | S-PBGA-B4 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.7 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |