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Power Field-Effect Transistor, 100A I(D), 1200V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-18
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
24AC8569
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Newark | Mosfet Mod, N-Ch, 1.2Kv, 100A, 0.02W, Mosfet Module Configuration:Half Bridge, Channel Type:Dual N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:22Pins, Rds(On) Test Voltage:- Rohs Compliant: Yes |Infineon FF11MR12W1M1B11BOMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1 |
|
$135.0600 / $151.4200 | Buy Now |
DISTI #
C1S322000670242
|
Chip1Stop | MOSFET RoHS: Compliant pbFree: No Container: Bulk | 3 |
|
$140.0000 | Buy Now |
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FF11MR12W1M1B11BOMA1
Infineon Technologies AG
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Datasheet
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FF11MR12W1M1B11BOMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 1200V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-18
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | MODULE-18 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 100 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XUFM-X18 | |
Number of Elements | 2 | |
Number of Terminals | 18 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FF11MR12W1M1B11BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF11MR12W1M1B11BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FF11MR12W1M1_B11 | Power Field-Effect Transistor, | Infineon Technologies AG | FF11MR12W1M1B11BOMA1 vs FF11MR12W1M1_B11 |
FF11MR12W1M1P_B11 | Power Field-Effect Transistor, | Infineon Technologies AG | FF11MR12W1M1B11BOMA1 vs FF11MR12W1M1P_B11 |