Part Details for FF1200R17KE3B2NOSA1 by Infineon Technologies AG
Overview of FF1200R17KE3B2NOSA1 by Infineon Technologies AG
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Part Details for FF1200R17KE3B2NOSA1
FF1200R17KE3B2NOSA1 CAD Models
FF1200R17KE3B2NOSA1 Part Data Attributes
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FF1200R17KE3B2NOSA1
Infineon Technologies AG
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Datasheet
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FF1200R17KE3B2NOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1700A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | MODULE-10 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 1700 A | |
Collector-Emitter Voltage-Max | 1700 V | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
JESD-30 Code | R-XUFM-X10 | |
Number of Elements | 2 | |
Number of Terminals | 10 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 2100 ns | |
Turn-on Time-Nom (ton) | 1050 ns |