Part Details for FF150R12KE3GHOSA1 by Infineon Technologies AG
Overview of FF150R12KE3GHOSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for FF150R12KE3GHOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
13AC8634
|
Newark | Igbt, Module, N-Ch, 1.2Kv, 225A, Transistor Polarity:N Channel, Dc Collector Current:225A, Collector Emitter Saturation Voltage Vce(On):1.7V, Power Dissipation Pd:780W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF150R12KE3GHOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$109.6900 / $128.8500 | Buy Now |
|
DISTI #
09AK3340
|
Newark | Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(Br)Ces, N-Channel |Infineon FF150R12KE3GHOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$150.9500 / $183.1500 | Buy Now |
|
DISTI #
FF150R12KE3GHOSA1-ND
|
DigiKey | IGBT MOD 1200V 225A 780W Min Qty: 1 Lead time: 16 Weeks Container: Tray |
1 In Stock |
|
$109.6345 / $128.7800 | Buy Now |
|
|
Future Electronics | FF150R12K Series 1200 V 225 A 780 W Chassis Mount IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray | 0Tray |
|
$104.5000 / $107.0800 | Buy Now |
|
|
Onlinecomponents.com |
5 Partner Stock |
|
$129.8700 / $135.0600 | Buy Now | |
|
|
Rochester Electronics | MEDIUM POWER 62MM RoHS: Compliant Status: Active Min Qty: 1 | 5 |
|
$106.7900 / $125.6400 | Buy Now |
|
|
Ameya Holding Limited | 4 |
|
RFQ | ||
|
DISTI #
SP000100740
|
EBV Elektronik | Transistor IGBT Module N-CH 1200V 225A �20V Screw Tray (Alt: SP000100740) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days | EBV - 0 |
|
Buy Now | |
|
DISTI #
2726118
|
element14 Asia-Pacific | IGBT, MODULE, N-CH, 1.2KV, 225A RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$110.6855 / $130.0161 | Buy Now |
|
DISTI #
2726118
|
Farnell | IGBT, MODULE, N-CH, 1.2KV, 225A RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 0 |
|
$107.6177 / $123.7534 | Buy Now |
Part Details for FF150R12KE3GHOSA1
FF150R12KE3GHOSA1 CAD Models
FF150R12KE3GHOSA1 Part Data Attributes
|
|
FF150R12KE3GHOSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FF150R12KE3GHOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 225 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 830 ns | |
| Turn-on Time-Nom (ton) | 400 ns |