Datasheets
FF150R12KS4B2HOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor

Part Details for FF150R12KS4B2HOSA1 by Infineon Technologies AG

Overview of FF150R12KS4B2HOSA1 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Part Details for FF150R12KS4B2HOSA1

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FF150R12KS4B2HOSA1 Part Data Attributes

FF150R12KS4B2HOSA1 Infineon Technologies AG
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FF150R12KS4B2HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-7
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 225 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1250 W
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 590 ns
Turn-on Time-Nom (ton) 180 ns
VCEsat-Max 3.7 V

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