Datasheets
FF150R12KS4HOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for FF150R12KS4HOSA1 by Infineon Technologies AG

Overview of FF150R12KS4HOSA1 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Price & Stock for FF150R12KS4HOSA1

Part # Distributor Description Stock Price Buy
DISTI # 448-FF150R12KS4HOSA1-ND
DigiKey IGBT MOD 1200V 225A 1250W Min Qty: 1 Lead time: 16 Weeks Container: Tray Temporarily Out of Stock
  • 1 $141.2300
  • 10 $130.7320
  • 30 $125.9607
  • 80 $120.2352
$120.2352 / $141.2300 Buy Now
DISTI # FF150R12KS4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 225A 20V Screw Mount Tray - Trays (Alt: FF150R12KS4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $146.4440
$146.4440 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray 0
Tray
  • 10 $133.0800
$133.0800 Buy Now
Bristol Electronics   10
RFQ
Quest Components   8
  • 1 $185.3312
  • 4 $166.7981
  • 7 $157.5315
$157.5315 / $185.3312 Buy Now
DISTI # FF150R12KS4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 225A 20V Screw Mount Tray - Trays (Alt: FF150R12KS4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $146.4440
$146.4440 Buy Now
Ameya Holding Limited   1
RFQ
DISTI # FF150R12KS4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 225A 20V Screw Mount Tray - Trays (Alt: FF150R12KS4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $146.4440
$146.4440 Buy Now
DISTI # SP000100706
EBV Elektronik Transistor IGBT Module N-CH 1200V 225A 20V Screw Mount Tray (Alt: SP000100706) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2726119
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $145.7654
  • 5 $134.9332
  • 10 $124.1010
$124.1010 / $145.7654 Buy Now
DISTI # 2726119
Farnell IGBT, MODULE, N-CH, 1.2KV, 225A RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 0
  • 1 $135.8819
  • 5 $127.0404
  • 10 $118.1864
$118.1864 / $135.8819 Buy Now

Part Details for FF150R12KS4HOSA1

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FF150R12KS4HOSA1 Part Data Attributes

FF150R12KS4HOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF150R12KS4HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Additional Feature FAST
Case Connection ISOLATED
Collector Current-Max (IC) 225 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 590 ns
Turn-on Time-Nom (ton) 180 ns

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