Datasheets
FF150R12ME3GBOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

Part Details for FF150R12ME3GBOSA1 by Infineon Technologies AG

Overview of FF150R12ME3GBOSA1 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Price & Stock for FF150R12ME3GBOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-FF150R12ME3GBOSA1-ND
DigiKey IGBT MOD 1200V 200A 695W Min Qty: 3 Lead time: 16 Weeks Container: Bulk MARKETPLACE PRODUCT 777
In Stock
  • 3 $128.1000
$128.1000 Buy Now
DISTI # FF150R12ME3GBOSA1-ND
DigiKey IGBT MOD 1200V 200A 695W Min Qty: 3 Lead time: 16 Weeks Container: Tray Limited Supply - Call
  • 10 $122.7070
$122.7070 Buy Now
DISTI # FF150R12ME3GBOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 200A 20V Screw Mount Tray - Trays (Alt: FF150R12ME3GBOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $150.7560
  • 20 $146.3220
  • 40 $141.8880
  • 60 $137.4540
  • 80 $133.0200
  • 100 $128.5860
  • 1,000 $124.1520
$124.1520 / $150.7560 Buy Now
Future Electronics FF150R12ME3G Series 1200 V 150 A 695 W Screw Mount EconoDUAL™ IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray 0
Tray
  • 1 $126.3200
  • 3 $124.6000
  • 5 $123.8100
  • 20 $121.6900
  • 30 $120.3100
$120.3100 / $126.3200 Buy Now
Rochester Electronics FF150R12 - IGBT Module RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 777
  • 1 $129.3300
  • 25 $126.7400
  • 100 $121.5700
  • 500 $116.3900
  • 1,000 $109.9300
$109.9300 / $129.3300 Buy Now
DISTI # FF150R12ME3GBOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 200A 20V Screw Mount Tray - Trays (Alt: FF150R12ME3GBOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $150.7560
  • 20 $146.3220
  • 40 $141.8880
  • 60 $137.4540
  • 80 $133.0200
  • 100 $128.5860
  • 1,000 $124.1520
$124.1520 / $150.7560 Buy Now
DISTI # FF150R12ME3GBOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 200A 20V Screw Mount Tray - Trays (Alt: FF150R12ME3GBOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $150.7560
  • 20 $146.3220
  • 40 $141.8880
  • 60 $137.4540
  • 80 $133.0200
  • 100 $128.5860
  • 1,000 $124.1520
$124.1520 / $150.7560 Buy Now
DISTI # SP000317332
EBV Elektronik Transistor IGBT Module N-CH 1200V 200A 20V Screw Mount Tray (Alt: SP000317332) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now

Part Details for FF150R12ME3GBOSA1

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FF150R12ME3GBOSA1 Part Data Attributes

FF150R12ME3GBOSA1 Infineon Technologies AG
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FF150R12ME3GBOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-11
Pin Count 11
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X11
Number of Elements 2
Number of Terminals 11
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 810 ns
Turn-on Time-Nom (ton) 400 ns

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