Datasheets
FF150R12MS4GBOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

Part Details for FF150R12MS4GBOSA1 by Infineon Technologies AG

Overview of FF150R12MS4GBOSA1 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Price & Stock for FF150R12MS4GBOSA1

Part # Distributor Description Stock Price Buy
DISTI # 49AC0215
Newark Igbt, Module, N-Ch, 1.2Kv, 225A, Transistor Polarity:N Channel, Dc Collector Current:225A, Collector Emitter Saturation Voltage Vce(On):3.2V, Power Dissipation Pd:1.25Kw, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF150R12MS4GBOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $140.7300
  • 5 $136.8400
  • 10 $132.9600
  • 25 $131.0200
  • 50 $129.0800
  • 100 $121.3200
$121.3200 / $140.7300 Buy Now
DISTI # 448-FF150R12MS4GBOSA1-ND
DigiKey IGBT MOD 1200V 225A 1250W Min Qty: 1 Lead time: 16 Weeks Container: Tray 10
In Stock
  • 1 $147.9100
  • 10 $138.5350
  • 30 $133.3263
$133.3263 / $147.9100 Buy Now
DISTI # FF150R12MS4GBOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 225A 20V Screw Mount Tray - Trays (Alt: FF150R12MS4GBOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $159.8515
$159.8515 Buy Now
Rochester Electronics FF150R12MS4G - MEDIUM POWER ECONO RoHS: Compliant Status: Active Min Qty: 1 3
  • 1 $150.4000
  • 25 $147.3900
  • 100 $141.3700
  • 500 $135.3600
  • 1,000 $127.8400
$127.8400 / $150.4000 Buy Now
DISTI # FF150R12MS4GBOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 225A 20V Screw Mount Tray - Trays (Alt: FF150R12MS4GBOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $159.8515
$159.8515 Buy Now
DISTI # FF150R12MS4GBOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 225A 20V Screw Mount Tray - Trays (Alt: FF150R12MS4GBOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $159.8515
$159.8515 Buy Now
DISTI # SP000091944
EBV Elektronik Transistor IGBT Module N-CH 1200V 225A 20V Screw Mount Tray (Alt: SP000091944) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2839507
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $159.4672
  • 5 $140.0705
  • 10 $137.2743
$137.2743 / $159.4672 Buy Now
DISTI # 2839507
Farnell IGBT, MODULE, N-CH, 1.2KV, 225A RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 0
  • 1 $124.0308
  • 5 $118.7608
  • 10 $113.9530
$113.9530 / $124.0308 Buy Now

Part Details for FF150R12MS4GBOSA1

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FF150R12MS4GBOSA1 Part Data Attributes

FF150R12MS4GBOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF150R12MS4GBOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X11
Pin Count 11
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 225 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X11
Number of Elements 2
Number of Terminals 11
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 590 ns
Turn-on Time-Nom (ton) 180 ns

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