Datasheets
FF150R12RT4HOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for FF150R12RT4HOSA1 by Infineon Technologies AG

Overview of FF150R12RT4HOSA1 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Price & Stock for FF150R12RT4HOSA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8637
Newark Igbt, Module, N-Ch, 1.2Kv, 150A, Transistor Polarity:N Channel, Dc Collector Current:150A, Collector Emitter Saturation Voltage Vce(On):1.75V, Power Dissipation Pd:790W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF150R12RT4HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Rochester Electronics FF150R12RT4 - MEDIUM POWER 34MM RoHS: Compliant Status: Active Min Qty: 1 1498
  • 1 $110.6700
  • 25 $108.4500
  • 100 $104.0300
  • 500 $99.6000
  • 1,000 $94.0700
$94.0700 / $110.6700 Buy Now
DISTI # FF150R12RT4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 150A ±20V Screw Tray - Trays (Alt: FF150R12RT4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Tray 0
  • 10 $128.9960
  • 20 $125.2020
  • 40 $121.4080
  • 60 $117.6140
  • 80 $113.8200
  • 100 $110.0260
  • 1,000 $106.2320
$106.2320 / $128.9960 Buy Now
DISTI # FF150R12RT4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 150A ±20V Screw Tray - Trays (Alt: FF150R12RT4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Tray 0
  • 10 $128.9960
  • 20 $125.2020
  • 40 $121.4080
  • 60 $117.6140
  • 80 $113.8200
  • 100 $110.0260
  • 1,000 $106.2320
$106.2320 / $128.9960 Buy Now
DISTI # 2726121
element14 Asia-Pacific IGBT, MODULE, N-CH, 1.2KV, 150A RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $121.2461
  • 5 $113.5843
  • 10 $105.9225
  • 50 $101.3357
$101.3357 / $121.2461 Buy Now
DISTI # 2726121
Farnell IGBT, MODULE, N-CH, 1.2KV, 150A RoHS: Compliant Min Qty: 1 Lead time: 21 Weeks, 1 Days Container: Each 0
  • 1 $115.3983
  • 5 $106.9682
  • 10 $98.5382
$98.5382 / $115.3983 Buy Now

Part Details for FF150R12RT4HOSA1

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FF150R12RT4HOSA1 Part Data Attributes

FF150R12RT4HOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF150R12RT4HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X5
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X5
Number of Elements 2
Number of Terminals 5
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 490 ns
Turn-on Time-Nom (ton) 185 ns

Alternate Parts for FF150R12RT4HOSA1

This table gives cross-reference parts and alternative options found for FF150R12RT4HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF150R12RT4HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FF150R12RT4 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF150R12RT4HOSA1 vs FF150R12RT4
Part Number Description Manufacturer Compare
FF150R12RT4 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF150R12RT4HOSA1 vs FF150R12RT4

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