Part Details for FF200R12KE3HOSA1 by Infineon Technologies AG
Overview of FF200R12KE3HOSA1 by Infineon Technologies AG
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for FF200R12KE3HOSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FF200R12KE3HOSA1-ND
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DigiKey | IGBT MODULE 1200V 1050W Min Qty: 1 Lead time: 16 Weeks Container: Tray |
14 In Stock |
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$133.1200 / $149.2600 | Buy Now |
DISTI #
FF200R12KE3HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 295A ±20V Screw Tray - Trays (Alt: FF200R12KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$154.7675 | Buy Now |
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Future Electronics | MEDIUM POWER 62MM RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray | 0Tray |
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$130.5100 / $133.1600 | Buy Now |
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Rochester Electronics | MEDIUM POWER 62MM RoHS: Compliant Status: Active Min Qty: 1 | 225 |
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$123.7700 / $145.6100 | Buy Now |
DISTI #
FF200R12KE3HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 295A ±20V Screw Tray - Trays (Alt: FF200R12KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$154.7675 | Buy Now |
DISTI #
FF200R12KE3
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TME | Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 200A Min Qty: 1 | 0 |
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$183.6600 / $264.2200 | RFQ |
DISTI #
FF200R12KE3HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 295A ±20V Screw Tray - Trays (Alt: FF200R12KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
|
$154.7675 | Buy Now |
DISTI #
SP000100735
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EBV Elektronik | Transistor IGBT Module N-CH 1200V 295A �20V Screw Tray (Alt: SP000100735) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days | EBV - 0 |
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Buy Now |
Part Details for FF200R12KE3HOSA1
FF200R12KE3HOSA1 CAD Models
FF200R12KE3HOSA1 Part Data Attributes
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FF200R12KE3HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FF200R12KE3HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 295 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 830 ns | |
Turn-on Time-Nom (ton) | 400 ns |