Part Details for FF600R12ME4P_B11 by Infineon Technologies AG
Overview of FF600R12ME4P_B11 by Infineon Technologies AG
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- Number of Functional Equivalents:
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Price & Stock for FF600R12ME4P_B11
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FF600R12ME4P_B11
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Mouser Electronics | IGBT Modules MEDIUM POWER ECONO RoHS: Compliant | 0 |
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Part Details for FF600R12ME4P_B11
FF600R12ME4P_B11 CAD Models
FF600R12ME4P_B11 Part Data Attributes
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FF600R12ME4P_B11
Infineon Technologies AG
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Datasheet
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FF600R12ME4P_B11
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X11 | |
| Number of Elements | 2 | |
| Number of Terminals | 11 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 770 ns | |
| Turn-on Time-Nom (ton) | 310 ns | |
| VCEsat-Max | 2.1 V |