Part Details for FF600R12ME4PB11BOSA1 by Infineon Technologies AG
Overview of FF600R12ME4PB11BOSA1 by Infineon Technologies AG
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Price & Stock for FF600R12ME4PB11BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
34AC1492
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Newark | Igbt, Module, N-Ch, 1.2Kv, 600A, Transistor Polarity:N Channel, Dc Collector Current:600A, Collector Emitter Saturation Voltage Vce(On):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF600R12ME4PB11BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$262.8200 / $286.8900 | Buy Now |
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DISTI #
448-FF600R12ME4PB11BOSA1-ND
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DigiKey | IGBT MODULE VCES 600V 600A Min Qty: 6 Lead time: 20 Weeks Container: Tray | Limited Supply - Call |
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$256.1813 / $284.2017 | Buy Now |
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DISTI #
FF600R12ME4PB11BOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 600A ±20V Screw Tray - Trays (Alt: FF600R12ME4PB11BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks, 0 Days Container: Tray | 0 |
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$277.4240 / $336.8720 | Buy Now |
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Future Electronics | FF600R12ME4 Series 1200 V 600 A Chassis Mount EconoDUAL™ IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 6 Package Multiple: 6 Container: Tray | 0Tray |
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$361.6300 / $368.4000 | Buy Now |
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Rochester Electronics | FF600R12 - Insulated Gate Bipolar Transistor Module RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 2 |
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$245.6400 / $288.9800 | Buy Now |
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DISTI #
FF600R12ME4PB11BOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 600A ±20V Screw Tray - Trays (Alt: FF600R12ME4PB11BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks, 0 Days Container: Tray | 0 |
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$277.4240 / $336.8720 | Buy Now |
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DISTI #
FF600R12ME4PB11BOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 600A ±20V Screw Tray - Trays (Alt: FF600R12ME4PB11BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 20 Weeks, 0 Days Container: Tray | 0 |
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$277.4240 / $336.8720 | Buy Now |
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DISTI #
SP001102652
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EBV Elektronik | Transistor IGBT Module N-CH 1.2kV 600A �20V Screw Tray (Alt: SP001102652) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 3 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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DISTI #
2781235
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$292.6464 / $333.1645 | Buy Now |
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DISTI #
2781235
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Farnell | IGBT, MODULE, N-CH, 1.2KV, 600A RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each | 0 |
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$234.2498 / $238.5832 | Buy Now |
Part Details for FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1 CAD Models
FF600R12ME4PB11BOSA1 Part Data Attributes
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FF600R12ME4PB11BOSA1
Infineon Technologies AG
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Datasheet
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FF600R12ME4PB11BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 995A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X11 | |
| Number of Elements | 2 | |
| Number of Terminals | 11 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 770 ns | |
| Turn-on Time-Nom (ton) | 310 ns | |
| VCEsat-Max | 2.1 V |