Datasheets
FF600R17ME4B11BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for FF600R17ME4B11BOSA1 by Infineon Technologies AG

Overview of FF600R17ME4B11BOSA1 by Infineon Technologies AG

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Price & Stock for FF600R17ME4B11BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 32AC7259
Newark Igbt, Module, N-Ch, 1.7Kv, 950A, Continuous Collector Current:950A, Collector Emitter Saturation Voltage:1.95V, Power Dissipation:-, Operating Temperature Max:150°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:1.7Kv Rohs Compliant: Yes |Infineon FF600R17ME4B11BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $261.2800
  • 5 $257.6300
  • 10 $253.9700
  • 25 $239.3600
$239.3600 / $261.2800 Buy Now
DISTI # FF600R17ME4B11BOSA1-ND
DigiKey IGBT MODULE VCES 1700V 600A Lead time: 52 Weeks Container: Bulk Limited Supply - Call
Buy Now
DISTI # FF600R17ME4B11BOSA1
Avnet Americas Transistor IGBT Module N-CH 1700V 950A 20V Screw Mount Tray - Trays (Alt: FF600R17ME4B11BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Container: Tray 0
RFQ
DISTI # FF600R17ME4B11BOSA1
Avnet Americas Transistor IGBT Module N-CH 1700V 950A 20V Screw Mount Tray - Trays (Alt: FF600R17ME4B11BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Container: Tray 0
RFQ
DISTI # FF600R17ME4B11BOSA1
Avnet Americas Transistor IGBT Module N-CH 1700V 950A 20V Screw Mount Tray - Trays (Alt: FF600R17ME4B11BOSA1) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Container: Tray 0
RFQ
DISTI # SP000885614
EBV Elektronik Transistor IGBT Module N-CH 1700V 950A 20V Screw Mount Tray (Alt: SP000885614) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks, 4 Days EBV - 0
Buy Now
DISTI # 2776814
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $471.1963
$471.1963 Buy Now
DISTI # 2776814
Farnell IGBT, MODULE, N-CH, 1.7KV, 950A RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 0
  • 1 $289.0088
  • 5 $283.7589
$283.7589 / $289.0088 Buy Now

Part Details for FF600R17ME4B11BOSA1

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FF600R17ME4B11BOSA1 Part Data Attributes

FF600R17ME4B11BOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF600R17ME4B11BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-11
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 950 A
Collector-Emitter Voltage-Max 1700 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X11
Number of Elements 2
Number of Terminals 11
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 4050 W
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 980 ns
Turn-on Time-Nom (ton) 320 ns
VCEsat-Max 2.3 V

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