Part Details for FF600R17ME4P by Infineon Technologies AG
Overview of FF600R17ME4P by Infineon Technologies AG
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for FF600R17ME4P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FF600R17ME4P
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Mouser Electronics | IGBT Modules MEDIUM POWER ECONO RoHS: Compliant | 0 |
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$309.6400 / $330.5400 | Order Now |
Part Details for FF600R17ME4P
FF600R17ME4P CAD Models
FF600R17ME4P Part Data Attributes
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FF600R17ME4P
Infineon Technologies AG
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Datasheet
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FF600R17ME4P
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector-Emitter Voltage-Max | 1700 V | |
Gate-Emitter Thr Voltage-Max | 6.4 V | |
Gate-Emitter Voltage-Max | 20 V | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-Channel | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 980 ns | |
Turn-on Time-Nom (ton) | 320 ns | |
VCEsat-Max | 2.3 V |