Datasheets
FF650R17IE4BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 930A I(C), 1700V V(BR)CES, N-Channel, MODULE-11

Part Details for FF650R17IE4BOSA1 by Infineon Technologies AG

Overview of FF650R17IE4BOSA1 by Infineon Technologies AG

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Price & Stock for FF650R17IE4BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8666
Newark Igbt, Module, N-Ch, 1.7Kv, 930A, Transistor Polarity:N Channel, Dc Collector Current:930A, Collector Emitter Saturation Voltage Vce(On):2V, Power Dissipation Pd:4.15Kw, Collector Emitter Voltage V(Br)Ceo:1.7Kv, Transistor Case Rohs Compliant: Yes |Infineon FF650R17IE4BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $431.5100
  • 5 $425.4700
  • 10 $419.4400
  • 25 $395.3000
$395.3000 / $431.5100 Buy Now
DISTI # 448-FF650R17IE4BOSA1-ND
DigiKey IGBT MODULE 1700V 4150W Min Qty: 1 Lead time: 14 Weeks Container: Tray 1
In Stock
  • 1 $448.1100
  • 12 $431.2650
$431.2650 / $448.1100 Buy Now
DISTI # FF650R17IE4BOSA1
Avnet Americas Transistor IGBT Module N-CH 1700V 930A 20V Screw Mount Tray - Trays (Alt: FF650R17IE4BOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days Container: Tray 0
  • 3 $517.0645
$517.0645 Buy Now
DISTI # FF650R17IE4BOSA1
Avnet Americas Transistor IGBT Module N-CH 1700V 930A 20V Screw Mount Tray - Trays (Alt: FF650R17IE4BOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days Container: Tray 0
  • 3 $567.1030
  • 5 $550.4235
  • 8 $533.7440
  • 20 $517.0645
  • 30 $500.3850
  • 150 $483.7055
  • 300 $467.0260
$467.0260 / $567.1030 Buy Now
Future Electronics PrimePACK™2 Series 1700 V 650 A 4150 W Chassis Mount NTC IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks Container: Tray 0
Tray
  • 1 $566.6200
  • 2 $558.3600
  • 3 $553.5800
  • 4 $550.2200
  • 5 $539.6400
$539.6400 / $566.6200 Buy Now
DISTI # 69266848
Verical Trans IGBT Module N-CH 1700V 930A 4150W 10-Pin PRIME2-1 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2243 Americas - 3
  • 1 $478.7500
$478.7500 Buy Now
Rochester Electronics FF650R17IE4 - PP, IHM I, XHP 1,7KV RoHS: Compliant Status: Active Min Qty: 1 2
  • 1 $486.4900
  • 25 $476.7600
  • 100 $457.3000
  • 500 $437.8400
  • 1,000 $413.5100
$413.5100 / $486.4900 Buy Now
DISTI # C1S322000806777
Chip1Stop IGBT Modules RoHS: Compliant Container: Tray 3
  • 1 $383.0000
$383.0000 Buy Now
DISTI # SP000614664
EBV Elektronik Trans IGBT Module N-CH 1.7KV 930A 8-pin PRIME2-1 (Alt: SP000614664) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FF650R17IE4BOSA1

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FF650R17IE4BOSA1 Part Data Attributes

FF650R17IE4BOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF650R17IE4BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 930A I(C), 1700V V(BR)CES, N-Channel, MODULE-11
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 11
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 930 A
Collector-Emitter Voltage-Max 1700 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1870 ns
Turn-on Time-Nom (ton) 720 ns

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