Datasheets
FF650R17IE4P by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for FF650R17IE4P by Infineon Technologies AG

Overview of FF650R17IE4P by Infineon Technologies AG

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Price & Stock for FF650R17IE4P

Part # Distributor Description Stock Price Buy
DISTI # 641-FF650R17IE4P
Mouser Electronics IGBT Modules PP IHM I XHP 1 7KV RoHS: Compliant 0
  • 3 $478.0000
  • 12 $460.0200
$460.0200 / $478.0000 Order Now

Part Details for FF650R17IE4P

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FF650R17IE4P Part Data Attributes

FF650R17IE4P Infineon Technologies AG
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FF650R17IE4P Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1700 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X10
Number of Elements 2
Number of Terminals 10
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1870 ns
Turn-on Time-Nom (ton) 720 ns
VCEsat-Max 2.45 V

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