Datasheets
FF650R17IE4PBOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-10

Part Details for FF650R17IE4PBOSA1 by Infineon Technologies AG

Overview of FF650R17IE4PBOSA1 by Infineon Technologies AG

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Price & Stock for FF650R17IE4PBOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-FF650R17IE4PBOSA1-448-ND
DigiKey FF650R17 - INSULATED GATE BIPOLA Min Qty: 1 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 90
In Stock
  • 1 $513.9900
$513.9900 Buy Now
DISTI # FF650R17IE4PBOSA1-ND
DigiKey IGBT MODULE 1700V 650A Min Qty: 3 Lead time: 14 Weeks Container: Tray Temporarily Out of Stock
  • 3 $478.0000
  • 12 $460.0300
$460.0300 / $478.0000 Buy Now
DISTI # FF650R17IE4PBOSA1
Avnet Americas IGBT Module, Dual [Half Bridge], 650 A, 2 V, 150 °C - Trays (Alt: FF650R17IE4PBOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days Container: Tray 0
  • 3 $551.5520
$551.5520 Buy Now
Rochester Electronics FF650R17 - Insulated Gate Bipolar Transistor Module RoHS: Compliant Status: Active Min Qty: 1 90
  • 1 $518.9300
  • 25 $508.5500
  • 100 $487.8000
  • 500 $467.0400
  • 1,000 $441.0900
$441.0900 / $518.9300 Buy Now
DISTI # FF650R17IE4PBOSA1
Avnet Americas IGBT Module, Dual [Half Bridge], 650 A, 2 V, 150 °C - Trays (Alt: FF650R17IE4PBOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days Container: Tray 0
  • 3 $551.5520
$551.5520 Buy Now
DISTI # FF650R17IE4PBOSA1
Avnet Americas IGBT Module, Dual [Half Bridge], 650 A, 2 V, 150 °C - Trays (Alt: FF650R17IE4PBOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days Container: Tray 0
  • 3 $551.5520
$551.5520 Buy Now
DISTI # SP001154624
EBV Elektronik IGBT Module, Dual [Half Bridge], 650 A, 2 V, 150 �C (Alt: SP001154624) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 2 Weeks, 1 Days EBV - 0
Buy Now

Part Details for FF650R17IE4PBOSA1

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FF650R17IE4PBOSA1 Part Data Attributes

FF650R17IE4PBOSA1 Infineon Technologies AG
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FF650R17IE4PBOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-10
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-10
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1700 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-PUFM-X10
Number of Elements 2
Number of Terminals 10
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1870 ns
Turn-on Time-Nom (ton) 720 ns

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