Part Details for FGA40N65SMD by Fairchild Semiconductor Corporation
Overview of FGA40N65SMD by Fairchild Semiconductor Corporation
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FGA40N65SMD
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | 650 V, 40 A FIELD STOP IGBT Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant | Europe - 210 |
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RFQ |
Part Details for FGA40N65SMD
FGA40N65SMD CAD Models
FGA40N65SMD Part Data Attributes
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FGA40N65SMD
Fairchild Semiconductor Corporation
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Datasheet
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FGA40N65SMD
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PN, SC-65, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-3PN | |
| Package Description | ROHS COMPLIANT, TO-3PN, SC-65, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 17 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 349 W | |
| Rise Time-Max (tr) | 28 ns | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON |