Datasheets
FGB5N60UNDF by:

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3/2

Part Details for FGB5N60UNDF by Fairchild Semiconductor Corporation

Overview of FGB5N60UNDF by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FGB5N60UNDF

Part # Distributor Description Stock Price Buy
Bristol Electronics   1250
RFQ
Rochester Electronics Insulated Gate Bipolar Transistor, 10A, 600V, N-Channel, TO-263AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 730
  • 1 $0.9326
  • 25 $0.9139
  • 100 $0.8766
  • 500 $0.8393
  • 1,000 $0.7927
$0.7927 / $0.9326 Buy Now
ComSIT USA 600 V, 5 A SHORT CIRCUIT RATED IGBT Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant Europe - 800
RFQ
Chip1Cloud IGBT 600V 10A 73.5W D2PAK 6480
RFQ
Perfect Parts Corporation   1701
RFQ

Part Details for FGB5N60UNDF

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FGB5N60UNDF Part Data Attributes

FGB5N60UNDF Fairchild Semiconductor Corporation
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FGB5N60UNDF Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3/2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description ROHS COMPLIANT, D2PAK-3/2
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 202 ns
Gate-Emitter Thr Voltage-Max 8.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 73.5 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 151.6 ns
Turn-on Time-Nom (ton) 7.5 ns

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