Part Details for FGD3040G2_F085 by Fairchild Semiconductor Corporation
Overview of FGD3040G2_F085 by Fairchild Semiconductor Corporation
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for FGD3040G2_F085
Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | IGBT 400V 41A 150W DPAK | 2500 |
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$1.1310 / $1.6960 | Buy Now |
Part Details for FGD3040G2_F085
FGD3040G2_F085 CAD Models
FGD3040G2_F085 Part Data Attributes
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FGD3040G2_F085
Fairchild Semiconductor Corporation
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Datasheet
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FGD3040G2_F085
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 23.2A I(C), 390V V(BR)CES, N-Channel, TO-252, ROHS COMPLIANT, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | DPAK | |
Package Description | ROHS COMPLIANT, DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 23.2 A | |
Collector-Emitter Voltage-Max | 390 V | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
Fall Time-Max (tf) | 15000 ns | |
Gate-Emitter Thr Voltage-Max | 2.2 V | |
Gate-Emitter Voltage-Max | 14 V | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Rise Time-Max (tr) | 7000 ns | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AUTOMOTIVE IGNITION | |
Transistor Element Material | SILICON |