Part Details for FGH20N6S2D by Fairchild Semiconductor Corporation
Overview of FGH20N6S2D by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FGH20N6S2D
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 28A, 600V, N-Channel, TO-247 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 9624 |
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$0.7058 / $0.8304 | Buy Now |
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Chip1Cloud | IGBT 600V 28A 125W TO247 | 65000 |
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RFQ |
Part Details for FGH20N6S2D
FGH20N6S2D CAD Models
FGH20N6S2D Part Data Attributes:
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FGH20N6S2D
Fairchild Semiconductor Corporation
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Datasheet
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Compare Parts:
FGH20N6S2D
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-247 | |
Package Description | TO-247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Collector Current-Max (IC) | 28 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 105 ns | |
Gate-Emitter Thr Voltage-Max | 5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 205 ns | |
Turn-on Time-Nom (ton) | 11.5 ns |
Alternate Parts for FGH20N6S2D
This table gives cross-reference parts and alternative options found for FGH20N6S2D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FGH20N6S2D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SGP5N60RUFD | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | FGH20N6S2D vs SGP5N60RUFD |
GT25Q101 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | FGH20N6S2D vs GT25Q101 |
HGT1S12N60B3S9A | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | FGH20N6S2D vs HGT1S12N60B3S9A |
HGTP20N60C3R | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Harris Semiconductor | FGH20N6S2D vs HGTP20N60C3R |
IRG4BC20FD-STRL | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | FGH20N6S2D vs IRG4BC20FD-STRL |
IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | FGH20N6S2D vs IXGH36N60A3D4 |
IRGPS40B120U | Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN | Infineon Technologies AG | FGH20N6S2D vs IRGPS40B120U |
SGP5N60RUF | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | FGH20N6S2D vs SGP5N60RUF |
IRG4PC40UD | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | FGH20N6S2D vs IRG4PC40UD |
IXSH10N120A | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | FGH20N6S2D vs IXSH10N120A |