Part Details for FGH40T100SMD-F155 by onsemi
Overview of FGH40T100SMD-F155 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for FGH40T100SMD-F155
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FGH40T100SMD-F155-ND
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DigiKey | IGBT TRENCH FS 1000V 80A TO247-3 Min Qty: 1 Lead time: 80 Weeks Container: Tube |
446 In Stock |
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$4.0022 / $8.0300 | Buy Now |
Part Details for FGH40T100SMD-F155
FGH40T100SMD-F155 CAD Models
FGH40T100SMD-F155 Part Data Attributes
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FGH40T100SMD-F155
onsemi
Buy Now
Datasheet
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Compare Parts:
FGH40T100SMD-F155
onsemi
IGBT, 1000V, 40A, Field Stop Trench, TO-247 3L, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-247 3L | |
| Manufacturer Package Code | 340CH | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 1000 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 30 ns | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 333 W | |
| Rise Time-Max (tr) | 64 ns | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 397 ns | |
| Turn-off Time-Nom (toff) | 305 ns | |
| Turn-on Time-Max (ton) | 100 ns | |
| Turn-on Time-Nom (ton) | 76 ns | |
| VCEsat-Max | 2.3 V |