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FGP30N6S2D by:

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-220AB,

Part Details for FGP30N6S2D by Fairchild Semiconductor Corporation

Overview of FGP30N6S2D by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for FGP30N6S2D

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FGP30N6S2D Part Data Attributes:

FGP30N6S2D Fairchild Semiconductor Corporation
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FGP30N6S2D Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-220AB,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Collector Current-Max (IC) 45 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 100 ns
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 163 ns
Turn-on Time-Nom (ton) 28 ns

Alternate Parts for FGP30N6S2D

This table gives cross-reference parts and alternative options found for FGP30N6S2D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FGP30N6S2D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTP12N60A4D_NL Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB ALTERNATE VERSION, 3 PIN Fairchild Semiconductor Corporation FGP30N6S2D vs HGTP12N60A4D_NL
IXDP20N60BD1 Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Littelfuse Inc FGP30N6S2D vs IXDP20N60BD1
HGTP12N60A4D 600V, SMPS IGBT, 800-TUBE onsemi FGP30N6S2D vs HGTP12N60A4D

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