-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
IGBT, Ultra Field Stop -1200V 60A, 450-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
85AC2840
|
Newark | Igbt 1200V 60A Ufs/Tube Rohs Compliant: Yes |Onsemi FGY60T120SQDN Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$6.3600 / $6.5500 | Buy Now |
DISTI #
FGY60T120SQDNOS-ND
|
DigiKey | IGBT 1200V 60A UFS Min Qty: 1 Lead time: 22 Weeks Container: Tube |
380 In Stock |
|
$6.3753 / $11.2400 | Buy Now |
DISTI #
FGY60T120SQDN
|
Avnet Americas | Transistor I GBT N-CH 1200V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY60T120SQDN) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$5.7979 / $6.9200 | Buy Now |
DISTI #
863-FGY60T120SQDN
|
Mouser Electronics | IGBT Transistors IGBT 1200V 60A UFS RoHS: Compliant | 360 |
|
$6.3100 / $11.2400 | Buy Now |
|
Future Electronics | FGY Series 1200 V 60 A 259 W Through Hole Ultra Field Stop IGBT - TO-247-3LD RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk | 0Bulk |
|
$6.8800 / $7.1900 | Buy Now |
|
Future Electronics | FGY Series 1200 V 60 A 259 W Through Hole Ultra Field Stop IGBT - TO-247-3LD RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 450 Container: Tube | 0Tube |
|
$6.8800 | Buy Now |
DISTI #
FGY60T120SQDN
|
Avnet Americas | Transistor I GBT N-CH 1200V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY60T120SQDN) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$5.7979 / $6.9200 | Buy Now |
DISTI #
FGY60T120SQDN
|
Avnet Americas | Transistor I GBT N-CH 1200V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY60T120SQDN) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$5.7979 / $6.9200 | Buy Now |
DISTI #
FGY60T120SQDN
|
Avnet Asia | Transistor I GBT N-CH 1200V 120A 3-Pin TO-247 Tube (Alt: FGY60T120SQDN) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days | 0 |
|
$5.2763 / $5.9012 | Buy Now |
DISTI #
FGY60T120SQDN
|
Avnet Silica | Transistor I GBT N-CH 1200V 120A 3-Pin TO-247 Tube (Alt: FGY60T120SQDN) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 3 Weeks, 2 Days | Silica - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
FGY60T120SQDN
onsemi
Buy Now
Datasheet
|
Compare Parts:
FGY60T120SQDN
onsemi
IGBT, Ultra Field Stop -1200V 60A, 450-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-247, 3 PIN | |
Manufacturer Package Code | 340CD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 56 Weeks | |
Date Of Intro | 2018-12-07 | |
Samacsys Manufacturer | onsemi | |
Additional Feature | HIGH SPEED SWITCHING | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 120 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 25 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 517 W | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | GENERAL PURPOSE SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 468 ns | |
Turn-on Time-Nom (ton) | 112 ns | |
VCEsat-Max | 1.95 V |