Part Details for FP10R12W1T7B11BOMA1 by Infineon Technologies AG
Overview of FP10R12W1T7B11BOMA1 by Infineon Technologies AG
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- Number of Functional Equivalents:
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for FP10R12W1T7B11BOMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
94AC1381
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Newark | Igbt Module, 1.2Kv, Transistor Polarity:-, Dc Collector Current:-, Collector Emitter Saturation Voltage Vce(On):-, Power Dissipation Pd:-, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Style:Module, No. Of Pins:-, Rohs Compliant: Yes |Infineon FP10R12W1T7B11BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 36 |
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$31.6200 / $41.8600 | Buy Now |
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DISTI #
38AH8397
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Newark | Low Power Easy Rohs Compliant: Yes |Infineon FP10R12W1T7B11BOMA1 Min Qty: 24 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$28.7500 / $32.9300 | Buy Now |
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DISTI #
FP10R12W1T7B11BOMA1-ND
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DigiKey | IGBT MODULE 1200V 10A 20MW EASY Min Qty: 1 Lead time: 26 Weeks Container: Tray |
21 In Stock |
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$34.5375 / $45.7900 | Buy Now |
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DISTI #
FP10R12W1T7B11BOMA1
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 10A ±20V Screw Tray - Trays (Alt: FP10R12W1T7B11BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
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$39.2615 | Buy Now |
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DISTI #
726-FP10R12W1T7B11BO
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Mouser Electronics | IGBT Modules EASY STANDARD RoHS: Compliant | 75 |
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$32.5800 / $39.1600 | Buy Now |
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Future Electronics | FP10R12 Series 1200 V 10 A 20 mW Three Phase Inverter Trench Field Stop Module RoHS: Compliant pbFree: No Min Qty: 24 Package Multiple: 24 Container: Tray | 0Tray |
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$29.8200 / $30.4400 | Buy Now |
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Rochester Electronics | LOW POWER EASY RoHS: Compliant Status: Active Min Qty: 1 | 24 |
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$31.4000 / $36.9400 | Buy Now |
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DISTI #
FP10R12W1T7B11BOMA1
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 10A ±20V Screw Tray - Trays (Alt: FP10R12W1T7B11BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
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$39.2615 | Buy Now |
|
DISTI #
FP10R12W1T7B11
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TME | Module: IGBT, diode/transistor, three-phase diode bridge, Ic: 10A Min Qty: 1 | 0 |
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$32.2200 / $40.6000 | RFQ |
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DISTI #
FP10R12W1T7B11BOMA1
|
Avnet Americas | Transistor IGBT Module N-CH 1.2kV 10A ±20V Screw Tray - Trays (Alt: FP10R12W1T7B11BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
|
$39.2615 | Buy Now |
Part Details for FP10R12W1T7B11BOMA1
FP10R12W1T7B11BOMA1 CAD Models
FP10R12W1T7B11BOMA1 Part Data Attributes
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FP10R12W1T7B11BOMA1
Infineon Technologies AG
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Datasheet
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FP10R12W1T7B11BOMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-23 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Thr Voltage-Max | 6.45 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X23 | |
| Number of Elements | 7 | |
| Number of Terminals | 23 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1005 ns | |
| Turn-on Time-Nom (ton) | 45 ns |