Datasheets
FP150R12KT4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for FP150R12KT4 by Infineon Technologies AG

Overview of FP150R12KT4 by Infineon Technologies AG

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Price & Stock for FP150R12KT4

Part # Distributor Description Stock Price Buy
DISTI # 726-FP150R12KT4BPSA1
Mouser Electronics IGBT Modules LOW POWER ECONO RoHS: Compliant 3
  • 1 $266.7200
  • 10 $209.7700
  • 20 $201.8800
$201.8800 / $266.7200 Buy Now
MacroQuest Electronics   35
RFQ

Part Details for FP150R12KT4

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FP150R12KT4 Part Data Attributes

FP150R12KT4 Infineon Technologies AG
Buy Now Datasheet
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FP150R12KT4 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X43
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Thr Voltage-Max 6.35 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X43
Number of Elements 7
Number of Terminals 43
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-61140; UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 750 ns
Turn-on Time-Nom (ton) 270 ns
VCEsat-Max 2.1 V

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