Datasheets
FP30R06W1E3_B11 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23

Part Details for FP30R06W1E3_B11 by Infineon Technologies AG

Overview of FP30R06W1E3_B11 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Robotics and Drones Motor control systems

Price & Stock for FP30R06W1E3_B11

Part # Distributor Description Stock Price Buy
DISTI # 641-FP30R06W1E3_B11
Mouser Electronics IGBT Modules IGBT Module 30A 600V RoHS: Compliant 75
  • 1 $41.5400
  • 10 $37.0100
  • 24 $33.2300
  • 48 $31.3600
  • 120 $31.1300
$31.1300 / $41.5400 Buy Now

Part Details for FP30R06W1E3_B11

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FP30R06W1E3_B11 Part Data Attributes

FP30R06W1E3_B11 Infineon Technologies AG
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FP30R06W1E3_B11 Infineon Technologies AG Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-23
Pin Count 23
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 37 A
Collector-Emitter Voltage-Max 600 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 115 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 245 ns
Turn-on Time-Nom (ton) 42 ns
VCEsat-Max 2 V

Alternate Parts for FP30R06W1E3_B11

This table gives cross-reference parts and alternative options found for FP30R06W1E3_B11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FP30R06W1E3_B11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FP30R06W1E3BOMA1 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3_B11 vs FP30R06W1E3BOMA1
Part Number Description Manufacturer Compare
FP30R06W1E3B11BOMA1 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3_B11 vs FP30R06W1E3B11BOMA1
FP30R06YE3 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3_B11 vs FP30R06YE3
FB30R06W1E3_B1 Insulated Gate Bipolar Transistor, 39A I(C), 600V V(BR)CES, N-Channel, MODULE-26 Infineon Technologies AG FP30R06W1E3_B11 vs FB30R06W1E3_B1
FB30R06W1E3B1BOMA1 Insulated Gate Bipolar Transistor, 39A I(C), 600V V(BR)CES, N-Channel, MODULE-26 Infineon Technologies AG FP30R06W1E3_B11 vs FB30R06W1E3B1BOMA1
FP30R06W1E3BOMA1 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3_B11 vs FP30R06W1E3BOMA1
FB30R06W1E3BOMA1 Insulated Gate Bipolar Transistor, 39A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3_B11 vs FB30R06W1E3BOMA1

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