Part Details for FP35R12U1T4 by Infineon Technologies AG
Overview of FP35R12U1T4 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for FP35R12U1T4
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FP35R12U1T4
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Mouser Electronics | IGBT Modules IGBT Module 35A 1200V RoHS: Compliant | 13 |
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$128.3300 / $148.3700 | Buy Now |
Part Details for FP35R12U1T4
FP35R12U1T4 CAD Models
FP35R12U1T4 Part Data Attributes
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FP35R12U1T4
Infineon Technologies AG
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Datasheet
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FP35R12U1T4
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-X23 | |
Pin Count | 35 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 54 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | COMPLEX | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X23 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 7 | |
Number of Terminals | 23 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 510 ns | |
Turn-on Time-Nom (ton) | 43 ns | |
VCEsat-Max | 2.25 V |