Part Details for FP35R12W2T4P by Infineon Technologies AG
Overview of FP35R12W2T4P by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for FP35R12W2T4P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IGBT2591
|
Rutronik | 3PH-PIM 1200V 35A TIM EasyPIM RoHS: Compliant Min Qty: 18 Package Multiple: 18 Container: Tray |
Stock DE - 756 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$55.3500 / $64.8200 | Buy Now |
Part Details for FP35R12W2T4P
FP35R12W2T4P CAD Models
FP35R12W2T4P Part Data Attributes
|
|
FP35R12W2T4P
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FP35R12W2T4P
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X35 | |
| Number of Elements | 7 | |
| Number of Terminals | 35 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 510 ns | |
| Turn-on Time-Nom (ton) | 43 ns | |
| VCEsat-Max | 2.25 V |